 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI1869DH Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) 1.8 to 20 rDS(on) () 0.165 at VIN = 4.5 V 0.222 at VIN = 2.5 V 0.303 at VIN = 1.8 V ID (A) 1.2 1.0 0.7 FEATURES * TrenchFET(R) Power MOSFETS: 1.8 V Rated * ESD Protected: 2000 V On Input Switch, VON/OFF * 165 m Low rDS(on) * 1.8 to 20 V Input * 1.5 to 8 V Logic Level Control * Low Profile, Small Footprint SC70-6 Package * Adjustable Slew-Rate RoHS COMPLIANT APPLICATIONS * Level Shift for Portable Devices DESCRIPTION The SI1869DH includes a P- and N-Channel MOSFET in a single SC70-6 package. The low on-resistance P-Channel TrenchFET is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level-shift to drive the P-Channel load-switch. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The SI1869DH operates on supply lines from 1.8 to 20 V, and can drive loads up to 1.2 A. APPLICATION CIRCUITS SI1869DH 40 tf 35 4 VIN Q2 6 6 Time (S) R1 C1 25 20 15 5 ON/OFF Q1 5 Ci 1 R2 R2 GND 0 0 2 4 R2 (k) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics 6 8 10 tr td(on) Co LOAD 10 td(off) 2, 3 VOUT 30 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F Switching Variation R2 at VIN = 2.5 V, R1 = 20 k COMPONENTS R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control Typical 10 k to 1 Mega* Typical 0 to 100 k* Typical 1000 pF The SI1869DH is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 73449 S-61965-Rev. B, 09-Oct-06 www.vishay.com 1 SI1869DH Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM SC70-6 Top View SI1869DH 4 S2 Q2 6 R1, C1 Marking Code VC XX 2, 3 D2 R2 1 6 R1, C1 5 Lot Traceability and Date Code Part # Code D2 2 5 ON/OFF YY D2 3 4 S2 ON/OFF Q1 Ordering Information: SI1869DH-T1-E3 (Lead (Pb)-free) R2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage (D2-S2) Input Voltage ON/OFF Voltage Load Current Continuous Intrinsic Diode Conduction Maximum Power Dissipation a a Symbol VDS VIN VON/OFF Continuousa, b Pulsedb, c IL IS PD TJ, Tstg ESD Limit - 20 20 8 1.2 3 - 0.4 1.0 - 55 to 150 2 Unit V A W C kV Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous Maximum Junction-to-Foot (Q2) current)a Symbol RthJA RthJF Typical 100 44 Maximum 125 55 Unit C/W SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter OFF Characteristics Reverse Leakage Current Diode Forward Voltage ON Characteristics Input Voltage Range Drain to Source Breakdown Voltage (P-Channel) On-Resistance (P-Channel) at 1 A VIN VDS VGS = 0 V, ID = - 250 A VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.2 A rDS(on) VON/OFF = 1.5 V, VIN = 2.5 V, ID = 1.0 A VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.7 A On-State (P-Channel) Drain-Current ID(on) VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 1 1.8 - 20 0.132 0.177 0.242 0.165 0.222 0.303 A 20 V IFL VSD VIN = 8 V, VON/OFF = 0 V IS = - 0.4 A 0.4 0.6 1 1.1 A V Symbol Test Conditions Min Typ Max Unit Notes: a. Surface Mounted on FR4 Board. b. VIN = 20 V, VON/OFF = 8 V, TA = 25 C. c. Pulse test: pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73449 S-61965-Rev. B, 09-Oct-06 SI1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 0.6 VON/OFF = 1.5 to 8 V 0.5 0.5 0.6 VON/OFF = 1.5 to 8 V V DROP (V) V DROP (V) 0.4 0.4 TJ = 125 C 0.3 0.3 TJ = 125 C TJ = 25 C 0.2 0.2 TJ = 25 C 0.1 0.1 0.0 0.0 0.5 1.0 1.5 IL - (A) 2.0 2.5 3.0 0.0 0.0 0.5 1.0 IL - (A) 1.5 2.0 2.5 VDROP vs. IL at VIN = 4.5 V 0.6 VON/OFF = 1.5 to 8 V 0.4 0.5 VDROP vs. IL at VIN = 2.5 V VON/OFF = 1.5 to 8 V 0.5 V DROP (V) V DROP (V) 0.4 TJ = 125 C 0.3 TJ = 25 C 0.3 0.2 TJ = 125 C 0.2 0.1 0.1 0.0 0.2 0.4 0.6 0.8 IL - (A) 1.0 1.2 1.4 1.6 0 1 2 3 VIN (V) 4 5 6 TJ = 25 C 0.0 0.0 VDROP vs. IL at VIN = 1.8 V 0.10 IL = 0.7 A VON/OFF = 1.5 to 8 V 0.06 V DROP Variance (V) VIN = 1.8 V r SS(on) - On-Resistance () 0.4 0.5 VDROP vs. VIN at IL = 0.7 A IL = 0.7 A VON/OFF = 1.5 to 8 V 0.02 VIN = 4.5 V - 0.02 0.3 TJ = 125 C 0.2 TJ = 25 C 0.1 - 0.06 - 0.10 - 50 0.0 - 25 0 25 50 75 100 125 150 0 1 2 3 VIN (V) 4 5 6 TJ - Junction Temperature (C) VDROP Variance vs. Junction Temperature On-Resistance vs. Input Voltage Document Number: 73449 S-61965-Rev. B, 09-Oct-06 www.vishay.com 3 SI1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 1.6 IL = 0.7 A VON/OFF = 1.5 to 8 V rDS(on) - On-Resiistance (Normalized) 1.4 20 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F tf Time ( S) 1.2 VIN = 1.8 V 12 VIN = 4.5 V 16 td(off) 1.0 8 0.8 4 tr td(on) 0 2 4 R2 (k) 6 8 10 0.6 - 50 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Normalized On-Resistance vs. Junction Temperature 40 tf 35 30 Time ( S) 25 20 15 10 20 5 0 0 2 4 R2 (k) 6 8 10 tr td(on) 0 0 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F Time ( S) 80 100 Switching Variation R2 at VIN = 4.5 V, R1 = 20 k tf IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F 60 40 td(off) tr 2 4 6 R2 (k) 8 td(on) 10 Switching Variation R2 at VIN = 2.5 V, R1 = 20 k 250 200 td(off) 150 Time ( S) Time ( S) 150 td(off) Switching Variation R2 at VIN = 1.8 V, R1 = 20 k 200 100 IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F tf IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F tf 100 50 tr td(on) 0 0 20 40 R2 (k) 60 80 100 50 td(on) tr 0 20 40 60 R2 (k) 80 100 0 Switching Variation R2 at VIN = 4.5 V, R1 = 300 k Switching Variation R2 at VIN = 2.5 V, R1 = 300 k www.vishay.com 4 Document Number: 73449 S-61965-Rev. B, 09-Oct-06 SI1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 200 td(off) 150 Time ( S) IL = 1 A VON/OFF = 3 V Ci = 10 F Co = 1 F tf 100 50 td(on) 0 0 tr 20 40 R2 (k) 60 80 100 Switching Variation R2 at VIN = 1.8 V, R1 = 300 k 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =100 C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 73449 S-61965-Rev. B, 09-Oct-06 www.vishay.com 5 SI1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73449. www.vishay.com 6 Document Number: 73449 S-61965-Rev. B, 09-Oct-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SI1869DH
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |